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| JIANGSU CHANGJIANG ELECTRONICS INDUSTIAL CO., LTD SOT-23 Plastic-Encapsulate Transistors S9016LT1 FEATURES Power dissipation PCM: TRANSISTOR (NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR 200 mW (Tamb=25) 2. 4 1. 3 0. 95 Collector current 0.025 A ICM: Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE(1) VCE(sat) 2. 9 1. 9 0. 95 1. 0 Unit: mm unless otherwise specified) Test conditions MIN 30 20 5 0.1 0.1 70 200 0.3 V TYP MAX UNIT V V V Ic= 100A, IE=0 Ic= 0.1mA, IB=0 IE=100A, IC=0 VCB=30V, IE=0 VEB= 3V, IC=0 VCE=5V, IC= 1mA IC=10mA, IB= 1mA VCE=5V, IC= 1mA 0. 4 A A Transition frequency fT f=100MHz 300 MHz DEVICE MARKING S9016LT1= Y6 |
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